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学术海报

    化学化工学院:Structure-Dependent Photo-Induced Charge Separation in Type-II Semiconductor Heterodimers

    日期:2014-11-10来源:化学化工学院 浏览量:

    报告题目:Structure-Dependent Photo-Induced Charge Separation in Type-II
    Semiconductor Heterodimers
    报告人:Toshiharu Teranishi (寺西 利治), 日本京都大学教授
    时间地点:2014年11月12日8:30 化学化工学院逸夫楼A315报告厅


    报告人简介:Prof. Toshiharu Teranishi received his PhD from The University of Tokyo under the direction of Prof. N. Toshima in 1994. He spent seven and a half years at Japan Advanced Institute of Science and Technology as an Assistant Professor and an Associate Professor. In 2004, he moved to University of Tsukuba as a Full Professor, and moved to Kyoto University in 2011. Current research interests include precise structural control of inorganic nanomaterials and structure-specific functions for high-performance devices and photo-energy conversion. Prof. Teranishi has published more than 150 papers in Angew. Chem. Int. Ed., J. Am. Chem. Soc., Nano. Lett., Phys. Rev. Lett., Chem. Sci., J. Phys. Chem. Lett. etc.. Prof. Teranishi got Science Promotion Award in the division of colloid and surface chemistry of the Chemical Society of Japan in 2004, the best presentation award in Gold Conference 2006, and Materials and Structures Laboratory Director Award in 2013.


    报告会摘要(Abstract of Presnetation):Highly efficient photoenergy conversion in semiconductor nanoparticle heterostructures requires the formation of epitaxial heterointerfaces and band alignment engineering. This requirement has led to attention being given to recent advances and prospects in the charge separation properties of Type-II semiconductor heterostructures composed of chalcogenide–chalcogenide blends. Type-II semiconductor heterostructures with a staggered alignment of band edges at the heterointerface can be synthesized by seeded growth or ion exchange to promote the spatial charge separation between electrons and holes in different parts of the heterostructure. Special attention has been given to CdS–Cu2-xS (0 ≤ x ≤ 0.0625) and CdS–CdTe (Figure 1) combinations where CdS is a commonly used n-type semiconductor and both Cu2-xS and CdTe are proper p-type semiconductors that are used as light absorbers in heterojunction solar cells.